sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1 . 6 5 + 0 . 1 5 - 0 . 1 5 0 . 1 m a x 0 . 9 0 + 0 . 0 5 - 0 . 0 5 1 2 4 3 1 base 2 collecto r 3 emitter 4 collecto r pzta 42 features high breakdow n voltage low c ollect or-e m itt er saturation voltage com plem entary to pzta 92(pnp) absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base volt age v cbo 300 v collector-em itt er voltage v ceo 300 v em itt er-base voltage v ebo 6 v collector curr ent -continuo us i c 500 m a collector pow er dissipati on p c 1 w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to 150 el ectrical character istics t a = 2 5 paramet er sym bol test conditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo ic = 100 a i e =0 300 v collector-to-e m itt er bre akdow n voltage v (br)ceo ic = 1 m a i b =0 300 v em itt er- to-base brea kdow n voltage v (br)ebo i e = 100 a i c =0 6 v collector cutof f c urr ent ic bo v cb = 200 v , i e =0 0.1 a em itt er cutoff c urr ent i ebo v eb = 6v , i c =0 0.1 a v ce = 10v, i c = 1m a 25 v ce = 10v, i c = 10m a 40 v ce = 10v, i c = 30m a 40 collector-emit ter sat uration v oltage v ce(sat) i c =20 m a, i b = 2m a 0.5 v base-em itt er saturation voltage v be(sat) i c = 20 m a, i b = 2m a 0.9 v output capacitance c ob v cb = 20v, f = 1.0m hz , i e = 0 3.0 pf transition frequency f t v ce = 20v, i c = 10m a,f =100 mh z 50 mh z h fe dc curre nt gain mark ing mar king a42 smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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